Title :
High-k HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation
Author :
Tan, Yan Ny ; Chim, Wai Kin ; Choi, Wee Kiong ; Joo, Moon Sig ; Ng, Tsu Hau ; Cho, Byung Jin
Author_Institution :
Dept. of Electr. & Comput. Eng., National Univ. of Singapore, Singapore
Abstract :
A HfAlO charge storage layer in SONOS (polysilicon-oxide-silicon nitride-oxide-silicon)-type memory with a SiO2/high-K/SiO2 (SOHOS) structure is proposed. Compared to other high-K charge storage layers, HfAlO shows the advantages of high speed program/erase of HfO2 as well as good charge retention of Al2O3, which makes HfAlO the most promising candidate for the charge storage layer. The charge storage and program/erase mechanisms of different charge storage layers in SONOS-type structures are also investigated.
Keywords :
aluminium compounds; flash memories; hafnium compounds; integrated memory circuits; semiconductor-insulator-semiconductor devices; silicon compounds; Al2O3; HfAlO; HfO2; SONOS-type memory; SiO2; SiO2/high-K/SiO2 structure; charge retention; charge storage layer; charge trapping layer; nonvolatile memory device; polysilicon-oxide-silicon nitride-oxide-silicon; program/erase mechanisms; Chemicals; Degradation; Flash memory; High K dielectric materials; High-K gate dielectrics; Moon; Nonvolatile memory; SONOS devices; Silicon; Voltage;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419323
