Title :
Ultra-low-noise, InP field effect transistor radio astronomy receivers: state-of-the-art
Author :
Pospieszalski, Marian W. ; Wollack, Edward J.
Author_Institution :
Nat. Radio Astron. Obs., Charlottesville, VA, USA
Abstract :
Recent developments in ultra-low-noise, cryogenically-cooled, heterostructure field-effect transistor (HFET) receivers for frequencies up to 118 GHz are reviewed. Design and examples of the realization of InP HFET amplifiers and receivers in the frequency range 3 to 118 GHz are described. Applications to ultra-low-noise radioastronomy receivers, as well as broadband continuum radiometers, are discussed
Keywords :
cryogenic electronics; field effect transistor circuits; indium compounds; millimetre wave amplifiers; millimetre wave detectors; millimetre wave receivers; radioastronomy; 3 to 118 GHz; HFET amplifiers; HFET receivers; InP; broadband continuum radiometers; cryogenically-cooled receivers; heterostructure field-effect transistor; radioastronomy receivers; ultra-low-noise receivers; Broadband amplifiers; FETs; Frequency; HEMTs; Indium phosphide; MODFETs; Radio astronomy; Radiofrequency amplifiers; Radiometers; Receivers;
Conference_Titel :
Microwaves, Radar and Wireless Communications. 2000. MIKON-2000. 13th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
83-906662-3-5
DOI :
10.1109/MIKON.2000.914041
