Title :
Highly manufacturable high density phase change memory of 64Mb and beyond
Author :
Ahn, S.J. ; Song, Y.J. ; Jeong, C.W. ; Shin, J.M. ; Fai, Y. ; Hwang, Y.N. ; Lee, S.H. ; Ryoo, K.C. ; Lee, S.Y. ; Park, J.H. ; Horii, H. ; Ha, Y.H. ; Yi, J.H. ; Kuh, B.J. ; Koh, G.H. ; Jeong, G.T. ; Jeong, H.S. ; Kim, Kinam ; Ryu, B.-I.
Author_Institution :
Adv. Technol. Dev., Samsung Electron. Co., Ltd., Kyunggi-Do, South Korea
Abstract :
Highly manufacturable 64Mbit PRAM has been successfully fabricated using N-doped Ge2Sb2Te5 (GST) and optimal GST etching process. Using those technologies, it was possible to achieve the low writing current of 0.6 mA and clear separation between SET and RESET resistance distributions. The 64Mb PRAM was designed to support commercial NOR flash memory compatible interfaces. Therefore, the fabricated chip was tested under the mobile application platform and its functionality and reliability has been evaluated by operation temperature dependency, disturbance, endurance, and retention. Finally, it was clearly demonstrated that high density PRAM can be fabricated in the product level with strong reliability to produce new nonvolatile memory markets.
Keywords :
antimony compounds; etching; flash memories; germanium compounds; semiconductor device manufacture; semiconductor device reliability; semiconductor storage; tellurium compounds; 0.6 mA; GST etching process; Ge2Sb2Te5; N-doped Ge2Sb2Te5; NOR flash memory; PRAM; RESET resistance distribution; SET resistance distribution; chip fabrication; mobile application platform; nonvolatile memory; operation temperature dependency; phase change memory; reliability; Etching; Flash memory; Manufacturing processes; Nonvolatile memory; Phase change memory; Phase change random access memory; Tellurium; Temperature dependence; Testing; Writing;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419329
