Title :
Novel InAlAs/InGaAs heterojunction FETs with modulated indium composition channel and AlAs/InAs superlattice barrier layer
Author :
Onda, K. ; Fujihara, A. ; Wakejima, A. ; Mizuki, E. ; Nakayama, T. ; Miyamoto, H. ; Ando, Y. ; Kanamori, M.
Author_Institution :
Kansai Electron. Res. Lab., NEC Corp., Shiga, Japan
Abstract :
Novel InAlAs/InGaAs heterojunction FETs (HJFETs) with modulated indium composition channels, named CCMTs (Channel Composition Modulated Transistors), have been successfully fabricated, in which an InAs channel is sandwiched by In0.53Ga0.47As/In0.8 Ga0.2As sub-channels. The channel structure is designed to improve electron transport and electron confinement by increase effective indium content in consideration of channel electron distribution. The fabricated devices also employ an AlAs/InAs superlattice as a barrier layer against impurity contamination for high thermal stability. A 0.2 μm T-shaped gate device exhibits gm of 1370 mS/mm, and Ft of 180 GHz at a low drain bias of 1.0 V. In high temperature and DC life test conducted at more than 230°C, the devices exhibited less than 3% degradation after 100 hrs, which shows the developed CCMTs with AlAs/InAs superlattice insertion technology can offer high-performance and highly-reliable InP-based HJFETs for various microwave and millimeter-wave applications
Keywords :
III-V semiconductors; aluminium compounds; diffusion barriers; gallium arsenide; indium compounds; junction gate field effect transistors; life testing; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device reliability; semiconductor device testing; semiconductor superlattices; thermal stability; 0.2 mum; 1 V; 100 hour; 1370 mS/mm; 180 GHz; 230 C; AlAs-InAs; AlAs/InAs superlattice barrier layer; HJFETs; In0.53Ga0.47As-In0.8Ga0.2 As; In0.53Ga0.47As/In0.8Ga0.2 As sub-channels; InAlAs/InGaAs heterojunction FETs; T-shaped gate device; channel composition modulated transistors; channel electron distribution; electron confinement; electron transport; high reliability; high temperature DC life test; high thermal stability; impurity contamination barrier layer; low drain bias; microwave applications; millimeter-wave applications; modulated In composition channel; transconductance; Contamination; Electrons; FETs; Heterojunctions; Impurities; Indium compounds; Indium gallium arsenide; Superlattices; Temperature; Thermal stability;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600086
