Electrothermal and phase-change dynamics in chalcogenide-based memories

Author

Lacaita, A.L. ; Redaelli, A. ; Ielmini, D. ; Pellizzer, F. ; Pirovano, A. ; Benvenut, A. ; Bez, R.

Author_Institution

DEI, Politecnico di Milano, Italy

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

911

Lastpage

914

Abstract

We analyzed the programming dynamics in phase-change memory (PCM) cells. The chalcogenide phase-change mechanism and phase distribution in the programmed cell is studied by both experiments and a numerical model, which self-consistently addresses the electrical-thermal conduction phase transition. We show that the reset-set transition is strongly coupled to the electronic switching in the amorphous phase, thus supporting the need for a self-consistent electrothermal-phase transition model to correctly account for all experimental evidences.

Keywords

chalcogenide glasses; phase change materials; semiconductor storage; semiconductor switches; amorphous phase; chalcogenide phase-change mechanism; chalcogenide-based memory; electrical-thermal conduction phase transition; electronic switching; electrothermal dynamics; electrothermal-phase transition model; phase change dynamics; phase change memory; phase distribution; programming dynamics; reset-set transition; Amorphous materials; Crystallization; Dynamic programming; Dynamic range; Electric resistance; Electrical resistance measurement; Electrothermal effects; Numerical models; Phase change materials; Phase change memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419330

Filename

1419330