DocumentCode :
3004757
Title :
Long-retention ferroelectric-gate FET with a (HfO2)x(Al2O3)1-x buffer-insulating layer for 1T FeRAM
Author :
Sakai, Shigeki ; Takahashi, Mitsue ; Ilangovan, Rajangam
Author_Institution :
National Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
915
Lastpage :
918
Abstract :
A ferroelectric-gate FET (FeFET) is significant for 1T FeRAM. Among fabricated Pt/SrBi2Ta2O9/(HfO2)x(Al2O3)1-x/Si FeFETs, we find that the optimum buffer-layer composition ratio, x, of HfO2 and Al2O3 exists around 0.75. A FeFET of x = 0.75 with high k buffer layer and low leakage current shows long data retention.
Keywords :
MOSFET; aluminium compounds; bismuth compounds; ferroelectric storage; hafnium compounds; leakage currents; platinum; random-access storage; silicon; strontium compounds; tantalum compounds; FeRAM; Pt-SrBi2Ta2O9-HfO2Al2O3-Si; Pt/SrBi2Ta2O9/(HfO2)x(Al2O3)1-x/Si; buffer-insulating layer; buffer-layer composition ratio; data retention; ferroelectric-gate FET; leakage current; Buffer layers; FETs; Ferroelectric films; Ferroelectric materials; Hafnium oxide; Leakage current; Nonvolatile memory; Polarization; Random access memory; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419331
Filename :
1419331
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3004757
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