• DocumentCode
    3004757
  • Title

    Long-retention ferroelectric-gate FET with a (HfO2)x(Al2O3)1-x buffer-insulating layer for 1T FeRAM

  • Author

    Sakai, Shigeki ; Takahashi, Mitsue ; Ilangovan, Rajangam

  • Author_Institution
    National Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
  • fYear
    2004
  • fDate
    13-15 Dec. 2004
  • Firstpage
    915
  • Lastpage
    918
  • Abstract
    A ferroelectric-gate FET (FeFET) is significant for 1T FeRAM. Among fabricated Pt/SrBi2Ta2O9/(HfO2)x(Al2O3)1-x/Si FeFETs, we find that the optimum buffer-layer composition ratio, x, of HfO2 and Al2O3 exists around 0.75. A FeFET of x = 0.75 with high k buffer layer and low leakage current shows long data retention.
  • Keywords
    MOSFET; aluminium compounds; bismuth compounds; ferroelectric storage; hafnium compounds; leakage currents; platinum; random-access storage; silicon; strontium compounds; tantalum compounds; FeRAM; Pt-SrBi2Ta2O9-HfO2Al2O3-Si; Pt/SrBi2Ta2O9/(HfO2)x(Al2O3)1-x/Si; buffer-insulating layer; buffer-layer composition ratio; data retention; ferroelectric-gate FET; leakage current; Buffer layers; FETs; Ferroelectric films; Ferroelectric materials; Hafnium oxide; Leakage current; Nonvolatile memory; Polarization; Random access memory; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-8684-1
  • Type

    conf

  • DOI
    10.1109/IEDM.2004.1419331
  • Filename
    1419331
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3004757