DocumentCode :
3004961
Title :
All-Epitaxial VCSELs with Tunnel-Coupled QDs-QW InAs-InGaAs Active Medium
Author :
Tokranov, V. ; Yakimov, M. ; van Eisden, J. ; Oktyabrsky, S.
Author_Institution :
Univ. at Albany, Albany
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
Tunnel-coupled pairs of InGaAs quantum well (QW) grown on top of InAs quantum dots (QDs) were optimized. All-epitaxial QDs-QW VCSELs demonstrated CW-mode lasing (Ith= 1.8 mA, Pmax.= 0.7mW) at QD ground state emission wavelength, 1135nm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; quantum well lasers; surface emitting lasers; InAs-InGaAs; VCSEL; current 1.8 mA; power 0.7 mW; quantum dots; quantum well; wavelength 1135 nm; Apertures; Current measurement; Indium gallium arsenide; Optical saturation; Quantum dot lasers; Stationary state; Surface emitting lasers; Threshold current; Tunneling; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/CLEO.2007.4452595
Filename :
4452595
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3004961
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