• DocumentCode
    3004961
  • Title

    All-Epitaxial VCSELs with Tunnel-Coupled QDs-QW InAs-InGaAs Active Medium

  • Author

    Tokranov, V. ; Yakimov, M. ; van Eisden, J. ; Oktyabrsky, S.

  • Author_Institution
    Univ. at Albany, Albany
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Tunnel-coupled pairs of InGaAs quantum well (QW) grown on top of InAs quantum dots (QDs) were optimized. All-epitaxial QDs-QW VCSELs demonstrated CW-mode lasing (Ith= 1.8 mA, Pmax.= 0.7mW) at QD ground state emission wavelength, 1135nm.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; quantum well lasers; surface emitting lasers; InAs-InGaAs; VCSEL; current 1.8 mA; power 0.7 mW; quantum dots; quantum well; wavelength 1135 nm; Apertures; Current measurement; Indium gallium arsenide; Optical saturation; Quantum dot lasers; Stationary state; Surface emitting lasers; Threshold current; Tunneling; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4452595
  • Filename
    4452595
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3004961