Title :
GaAs FET characterization in a quasi-monolithic Si environment
Author :
Wasige, E. ; Kompa, G. ; van Raay, F. ; Scholz, W. ; Rangelow, I.W. ; Kassing, R. ; Bertram, S. ; Hudek, P.
Author_Institution :
FG Hochfrequenztech., Kassel Univ., Germany
Abstract :
GaAs FET chips are planar embedded in a high resistivity silicon substrate and characterized up to 40 GHz in a coplanar environment. Hybrid interconnects (bonding wires) are replaced by thin film ones (air bridges). Small signal equivalent circuit extraction results confirm the expected low parasitic inductance values. These are reduced by more than 50% of the typical bonding wire interconnects.
Keywords :
III-V semiconductors; MESFET integrated circuits; S-parameters; elemental semiconductors; equivalent circuits; field effect MIMIC; field effect MMIC; gallium arsenide; inductance; integrated circuit interconnections; silicon; 1 to 40 GHz; GaAs; GaAs FET characterization; Si; air bridges; bonding wire interconnects; bonding wires; coplanar environment; hybrid interconnects; parasitic inductance values; planar embedding; quasi-monolithic Si environment; small signal equivalent circuit extractio; thin film interconnects; Bonding; Bridge circuits; Conductivity; FETs; Gallium arsenide; Integrated circuit interconnections; Silicon; Substrates; Thin film circuits; Wires;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.780342
