DocumentCode
3005023
Title
Strong Lateral Confinement in Ga(AsSb)/GaAs/(AlGa)As Heterostructures
Author
Horst, S. ; Chatterjeea, S. ; Klar, P.J. ; Nemeth, I. ; Stolz, Wolfgang ; Volz, K. ; Buckers, C. ; Thranhardt ; Koch, S.W. ; Blume, Gunnar ; Ruhle, W. ; Johnson, S.R. ; Wang, Jun-Bo ; Zhang, Yong-Heng
Author_Institution
Philipps-Universitdt Marburg, Marburg
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We investigate a series of Ga(AsSb)/GaAs/AlGaAs quantum wells, that show an additional inplane confinement. This is attributed to the formation of self-organized GaAsSb quantum-islands during growth with confinement energies of several hundred meV.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; quantum wells; Ga(AsSb)-GaAs-(AlGa)As; inplane confinement; lateral confinement; quantum well; quantum-islands; Carrier confinement; Chemicals; Gallium arsenide; Laser excitation; Lattices; Molecular beam epitaxial growth; Photoluminescence; Spectroscopy; Temperature; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4452599
Filename
4452599
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