Title :
Time-Resolved Photoluminescence of Nitrogen-Cluster States in Dilute Ga(NAs)/GaAs Heterostructures
Author :
Hantke, K. ; Horst, S. ; Kohli, K. ; Chatterjee, S. ; Klar, P.J. ; Stolz, W. ; Rühle, W.W. ; Masia, F. ; Pettinari, G. ; Polimeni, A. ; Capizzi, M.
Author_Institution :
Philipps-Univ. Marburg, Marburg
Abstract :
We investigate time-resolved photoluminescence in Ga(NAs)/GaAs. We find that energy relaxation of optically excited carriers from the conduction band into nitrogen-related cluster states depends on temperature, excitation density, and effective nitrogen concentration after hydrogenation.
Keywords :
III-V semiconductors; conduction bands; gallium arsenide; photoluminescence; semiconductor epitaxial layers; time resolved spectra; GaNAs-GaAs; conduction band; dilute Ga(NAs)/GaAs heterostructures; energy relaxation; excitation density; hydrogenation; nitrogen-related cluster states; optically excited carriers; time-resolved photoluminescence; Atom optics; Epitaxial growth; Epitaxial layers; Gallium arsenide; Laser excitation; Nitrogen; Photoluminescence; Spectroscopy; Temperature; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452600
