• DocumentCode
    3005056
  • Title

    N-rich and dilute-nitride GaNx(AsSb)1-x on InP substrates

  • Author

    Mawst, L.J. ; Xu, D.P. ; Huang, J.Y.T. ; Park, J.H. ; Rathi, M.K. ; Kuech, T.F.

  • Author_Institution
    Univ. of Wisconsin-Madison, Madison
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    GaAsNSb alloys have been demonstrated using MOCVD growth over a wide span of nitrogen composition. Dilute-nitride alloys hold potential for mid-IR emission using GaAsSbN/GaAsSb type-II QWs.
  • Keywords
    III-V semiconductors; MOCVD coatings; dilute alloys; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; InGaAsN(Sb); MOCVD growth; dilute-nitride alloys; mid-IR emission; nitrogen composition; quantum well lasers; semiconductor lasers; Capacitive sensors; Gallium arsenide; Gallium nitride; Indium phosphide; Lasers and Electro-Optics Society; MOCVD; Nitrogen; Optical materials; Temperature; Tensile strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4452601
  • Filename
    4452601
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3005056