Title :
Sub-band energy level controlling of QDs using InGaAs Gradient Composition strain-reducing layer
Author :
Amano, T. ; Yamauchi, S. ; Sugaya, T. ; Komori, K.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST) & CREST, Tsukuba
Abstract :
We propose the sub-band energy level controlling of QDs using an InGaAs GC-SRL. We were able to realize a large sub-band shift of 70 meV using a GC-SRL at the fourth-order energy level. Using the GC-SRL, we were able to control not only the sub-band energy level but also the confinement energy of these potential structures.
Keywords :
III-V semiconductors; energy states; gallium arsenide; indium compounds; semiconductor quantum dots; InGaAs; confinement energy; fourth-order energy level; gradient composition strain-reducing layer; photoluminescence; quantum dot structure; subband energy level; subband shift; Energy measurement; Energy states; Gallium arsenide; Indium gallium arsenide; Optical computing; Optical control; Potential energy; Quantum computing; Strain control; Substrates;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452603
