DocumentCode
3005094
Title
Different Methods of Improving Time Response of Phototriode
Author
Liang Hong ; Shi Jian-hua
Author_Institution
Sch. of Sci., Commun. Univ. of China, Beijing, China
fYear
2012
fDate
21-23 May 2012
Firstpage
1
Lastpage
4
Abstract
Based on the theoretical analysis, we find out the intrinsic relationship between the junction capacitance, base resistance, base width and the gain, and then introduce the various process, technology and optimization ideas to shorten the optoelectronic transistor´s response time from the physical structure of the device.
Keywords
optimisation; optoelectronic devices; triodes; intrinsic relationship; junction capacitance; optimization; optoelectronic transistor; phototriode; physical structure; time response; Capacitance; Educational institutions; Immune system; Junctions; Optimization; Time factors; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location
Shanghai
ISSN
2156-8464
Print_ISBN
978-1-4577-0909-8
Type
conf
DOI
10.1109/SOPO.2012.6271052
Filename
6271052
Link To Document