DocumentCode :
3005094
Title :
Different Methods of Improving Time Response of Phototriode
Author :
Liang Hong ; Shi Jian-hua
Author_Institution :
Sch. of Sci., Commun. Univ. of China, Beijing, China
fYear :
2012
fDate :
21-23 May 2012
Firstpage :
1
Lastpage :
4
Abstract :
Based on the theoretical analysis, we find out the intrinsic relationship between the junction capacitance, base resistance, base width and the gain, and then introduce the various process, technology and optimization ideas to shorten the optoelectronic transistor´s response time from the physical structure of the device.
Keywords :
optimisation; optoelectronic devices; triodes; intrinsic relationship; junction capacitance; optimization; optoelectronic transistor; phototriode; physical structure; time response; Capacitance; Educational institutions; Immune system; Junctions; Optimization; Time factors; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location :
Shanghai
ISSN :
2156-8464
Print_ISBN :
978-1-4577-0909-8
Type :
conf
DOI :
10.1109/SOPO.2012.6271052
Filename :
6271052
Link To Document :
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