DocumentCode
3005135
Title
InGaN/GaN MQW Nanorods LED Fabricated by ICP-RIE and PEC Oxidation Processes
Author
Lai, Fang-I ; Huang, H.W. ; Chiu, Ching-Hua ; Lai, C.F. ; Lu, T.C. ; Kuo, H.C. ; Wang, S.C.
Author_Institution
Yuan-Ze Univ., Taoyuan
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
The InGaN/GaN nanorods LED was successfully fabricated by ICP-RIE and PEC processes. Compared with as-grown sample, the PL and EL peak-wavelengths of the nanorods with PEC show 8.6 and 10.5 nm blue-shift, respectively.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; oxidation; photoelectrochemistry; plasma materials processing; quantum well devices; spectral line shift; sputter etching; InGaN-GaN; blue-shift; electroluminescence; inductively coupled plasma reactive ion etching; multiple quantum well nanorods; nanorod LED; photoelectrochemical oxidation; photoluminescence; Capacitive sensors; Etching; Gallium nitride; Gold; Light emitting diodes; Oxidation; Plasma temperature; Quantum well devices; Self-assembly; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4452607
Filename
4452607
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