• DocumentCode
    3005203
  • Title

    Open circuit failures in CVD-WSix/poly-Si interconnects

  • Author

    Shishino, M. ; Nishiwaki, T. ; Mitsui, A. ; Imanishi, S. ; Shiraishi, M.

  • Author_Institution
    Matsushita Electron. Corp., Kyoto, Japan
  • fYear
    1989
  • fDate
    12-13 Jun 1989
  • Firstpage
    447
  • Lastpage
    453
  • Abstract
    It was observed that the polycide interconnect formed on reflowed glass opened during heat treatment in VLSI fabrication. In failure analysis, crevices were observed. These crevices originated from cracks in the WSix film. In order to prevent these failures, correlations between the cracks in the WSix interconnect and the properties of the WSix film are examined in detail. Open failures in polycide interconnects are suppressed by decreasing the tensile stress of WSix films as well as by decreasing their fluorine concentration
  • Keywords
    VLSI; circuit reliability; cracks; elemental semiconductors; failure analysis; integrated circuit technology; metallisation; silicon; tungsten compounds; CVD-WSix/poly-Si interconnects; F concentration reduction; IC metallisation; VLSI fabrication; WSix-Si; cracks; crevices; failure analysis; heat treatment; open circuit failures; polycide interconnect; polycrystalline semiconductor; reflowed glass; tensile stress reduction; Electric shock; Electrodes; Etching; Fabrication; Glass; Integrated circuit interconnections; Semiconductor films; Testing; Thermal resistance; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
  • Conference_Location
    Santa Clara, CA
  • Type

    conf

  • DOI
    10.1109/VMIC.1989.78036
  • Filename
    78036
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3005203