Title :
Open circuit failures in CVD-WSix/poly-Si interconnects
Author :
Shishino, M. ; Nishiwaki, T. ; Mitsui, A. ; Imanishi, S. ; Shiraishi, M.
Author_Institution :
Matsushita Electron. Corp., Kyoto, Japan
Abstract :
It was observed that the polycide interconnect formed on reflowed glass opened during heat treatment in VLSI fabrication. In failure analysis, crevices were observed. These crevices originated from cracks in the WSix film. In order to prevent these failures, correlations between the cracks in the WSix interconnect and the properties of the WSix film are examined in detail. Open failures in polycide interconnects are suppressed by decreasing the tensile stress of WSix films as well as by decreasing their fluorine concentration
Keywords :
VLSI; circuit reliability; cracks; elemental semiconductors; failure analysis; integrated circuit technology; metallisation; silicon; tungsten compounds; CVD-WSix/poly-Si interconnects; F concentration reduction; IC metallisation; VLSI fabrication; WSix-Si; cracks; crevices; failure analysis; heat treatment; open circuit failures; polycide interconnect; polycrystalline semiconductor; reflowed glass; tensile stress reduction; Electric shock; Electrodes; Etching; Fabrication; Glass; Integrated circuit interconnections; Semiconductor films; Testing; Thermal resistance; Very large scale integration;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1989.78036
