DocumentCode :
3005231
Title :
Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO2 interface
Author :
Tsai, J.R. ; Ho, L.W. ; Lin, S.H. ; Chang, T.C. ; Shieh, M.D. ; Lin, H.C. ; Lin, J.P. ; Feng, W.S. ; Chang, R.D.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
979
Lastpage :
982
Abstract :
Experiments of phosphorus dose loss were performed to investigate fundamental kinetics of dopant segregation at the Si/SiO2 interface. A new interface cluster model was proposed in addition to the conventional interface trap model. Simulations successfully fit the transient behavior of phosphorus dose loss over a wide temperature range. Segregation energies were extracted from detrapping/trapping ratios at different temperatures.
Keywords :
doping profiles; interface phenomena; phosphorus; segregation; silicon compounds; Si-SiO2:P; detrapping-trapping ratio; dopant segregation modeling; interface cluster model; interface trap model; phosphorus dose loss; segregation energy; silicon interface; transient behavior; Annealing; Furnaces; Implants; Isothermal processes; Kinetic theory; Semiconductor device modeling; Semiconductor process modeling; Silicon; Temperature distribution; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419350
Filename :
1419350
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3005231
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