Title :
GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well (FACQW) Mach-Zehnder Modulator
Author :
Arakawa, T. ; Takada, K. ; Tadano, F. ; Arima, T. ; Noh, J.-H. ; Tada, K.
Author_Institution :
Yokohama Nat. Univ., Yokohama
Abstract :
Two types of Mach-Zehnder modulators with GaAs FACQWs were fabricated, and their static modulation characteristics were measured. A half-wave voltage and estimated |dn/dF| in the FACQW were 1.7 V and 3.3 x 10 5 cm/kV, respectively.
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; gallium arsenide; optical fabrication; optical modulation; semiconductor quantum wells; GaAs-AlGaAs; Mach-Zehnder modulator; five-layer asymmetric coupled quantum well; voltage 1.7 V; Absorption; Chirp modulation; Electrodes; Erbium; Gallium arsenide; Intensity modulation; Molecular beam epitaxial growth; Optical modulation; Quantum well devices; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452613
