Experimental and simulation study of boron segregation and diffusion during gate oxidation and spike annealing

In this paper, we address the problem of boron channel profile dependence on active area width due to lateral segregation. Boron segregation at the Si/SiO₂ interface and boron diffusion in silicon are experimentally characterized by means of 1D SIMS. Used samples explore the process conditions typical of both channel formation (low dose/gate oxidation) and p⁺ ultra shallow junction formation (high dose/spike annealing). A comprehensive simulation model of boron segregation/diffusion is calibrated to reproduce a large variety of experimental conditions with an unique set of parameters. The calibrated model is then exploited to investigate the dependence of device electrical parameters on active area width.