Title :
Device technologies for high quality and smaller pixel in CCD and CMOS image sensors
Author_Institution :
Semicond. Solutions Network Co., Sony Corp., Kanagawa, Japan
Abstract :
This paper reviews the trends in imaging device technologies of CCD and CMOS image sensors over the last few decades, and discusses the process and design architecture for CMOS image sensors with mega-pixels a few μm in size. These require a buried photodiode and a sharing transistor to gain saturation and sensitivity. An on-chip micro lens is useful, not only for raising the sensitivity but also suppressing the optical cross talk.
Keywords :
CCD image sensors; CMOS image sensors; microlenses; photodiodes; transistors; CCD image sensors; CMOS image sensors; buried photodiode; imaging device technology; megapixel; on-chip micro lens; optical cross talk; sharing transistor; CMOS image sensors; CMOS technology; Charge coupled devices; Lenses; Optical imaging; Optical saturation; Optical sensors; Photodiodes; Pixel; Process design;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419354
