Title :
Modelling spin-on film planarization properties
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
Summary form only given. A description is given of spun-on film contour modeling and characterization procedures that can be used to predict the planarization properties presented for resist and spin-on glass (SOG) materials. These parameters are related to spun-on solution properties and can be used to design spin-on film properties and processes to obtain specific planarization results. An equation describing the spin-on film contour is presented. The parameters appearing in the equation can be used to predict planarization properties on any complex topography and with multiple spun-on coatings. SOG films require special modeling considerations due to mass depletion effects, since their thin spun-on film thicknesses are typically much less than the step height
Keywords :
coatings; glass; modelling; resists; SOG films; characterization procedures; complex topography; film contour modeling; mass depletion effects; multiple spun-on coatings; resist; spin-on film planarization properties; spin-on glass; spun-on solution properties; Dielectric materials; Equations; Frequency; Glass; Planarization; Predictive models; Resists; Semiconductor device modeling; Surface tension; Viscosity;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1989.78041