Title :
Crosstalk improvement technology applicable to 0.14μm CMOS image sensor
Author :
Tseng, Chien-Hsien ; Wuu, Shou-Gwo ; Chien, Ho-Ching ; Yaung, Dun-Nian ; Hsu, Tze-Hsuan ; Lin, Jeng-Shyan ; Hsu, Hung-Jen ; Yu, Chung-Yi ; Lo, Chin-Hsin ; Wang, Chung S.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
Abstract :
For pixel crosstalk improvement, modified logic technology with thin epi wafer thickness, thin backend process thickness and air gap guard ring technology, pixel size can be further scaled down to less than 2.8 μm × 2.8 μm and maintain the same performance as 4.0 μm × 4.0 μm pixel does. Greater than 65% crosstalk reduction at 10° incident angle has been demonstrated. This technology can be applicable to CMOS image sensor with 0.14 μm design rules.
Keywords :
CMOS image sensors; 0.14 micron; CMOS image sensor; air gap guard ring; backend process thickness; epi wafer thickness; modified logic technology; pixel crosstalk improvement; pixel size reduction; CMOS image sensors; CMOS logic circuits; CMOS process; CMOS technology; Computational Intelligence Society; Crosstalk; Isolation technology; Optical diffraction; Optical filters; Semiconductor device manufacture;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419356
