Title :
The Effects of Structural Parameters Alteration on Improvement of Current Gain and High Frequency Performance of a AlGaAs/GaAs SHBT
Author :
Kaatuzian, Hassan ; Javadi, Elham ; Khatami, Saeid
Author_Institution :
Dept. of Electr. Eng., Amirkabir Univ. of Technol. (Tehran Polytech.), Tehran, Iran
Abstract :
In this paper the influence of structural parameters variations on the current gain and high frequency performance of a AlGaAs/GaAs HBT are investigated. Analytical equations are used to predict conventional microwave-photonic device structure for performance improvement. Through scaling of the length and width of the emitter and the thickness of the base, cutoff frequency and maximum oscillation frequency are improved from 26GHz to 29GHz and form 45GHz to 76GHz respectively. Also the DC current gain increases from 362 up to 579.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; high-frequency effects; semiconductor heterojunctions; AlGaAs-GaAs; AlGaAs-GaAs SHBT; DC current gain; analytical equations; current gain improvement; cutoff frequency; emitter length scaling; emitter width scaling; frequency 26 GHz to 29 GHz; frequency 45 GHz to 76 GHz; high frequency performance improvement; microwave-photonic device structure; oscillation frequency; structural parameter alteration effects; Cutoff frequency; Gallium arsenide; Heterojunction bipolar transistors; Oscillators; Performance evaluation; Resistance;
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-0909-8
DOI :
10.1109/SOPO.2012.6271068
