100nm InAlAs/InGaAs double-gate HEMT using transferred substrate

Author

Wichmann, N. ; Duszynski, I. ; Bollaert, S. ; Mateos, J. ; Wallart, X. ; Cappy, A.

Author_Institution

IEMN-DHS, UMR CNRS, Villeneuve d´´ascq, France

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

1023

Lastpage

1026

Abstract

100nm T-gates InP double-gate HEMTs (DG-HEMT) have been fabricated by use of transferred substrate technique. Theses devices are compared with standard single 100nm T-gate HEMT. The maximum extrinsic transconductance gm of DG-HEMT is two times higher than the HEMT one, and the extrinsic output conductance gd is significantly reduced with DG-HEMT. The combined high gm and low gd induced an extremely high intrinsic unloaded voltage gain gm/gd of 100. So, theses results allowed an improvement of the maximum oscillation frequency (f_max) of 30% compared with standard single 100nm T-gate HEMT. These results are attributed to reduction of short channel effects, related to higher charge control efficiency and suppression of buffer effect.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave devices; nanotechnology; substrates; 100 nm; DG-HEMT fabrication; InAlAs-InGaAs; InAlAs/InGaAs double-gate HEMT; T-gates InP double-gate HEMT; buffer effect suppression; microwave applications; oscillation frequency; transconductance; transferred substrate; Epitaxial layers; Fabrication; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Microwave devices; Substrates; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419364

Filename

1419364