Title :
100nm InAlAs/InGaAs double-gate HEMT using transferred substrate
Author :
Wichmann, N. ; Duszynski, I. ; Bollaert, S. ; Mateos, J. ; Wallart, X. ; Cappy, A.
Author_Institution :
IEMN-DHS, UMR CNRS, Villeneuve d´´ascq, France
Abstract :
100nm T-gates InP double-gate HEMTs (DG-HEMT) have been fabricated by use of transferred substrate technique. Theses devices are compared with standard single 100nm T-gate HEMT. The maximum extrinsic transconductance gm of DG-HEMT is two times higher than the HEMT one, and the extrinsic output conductance gd is significantly reduced with DG-HEMT. The combined high gm and low gd induced an extremely high intrinsic unloaded voltage gain gm/gd of 100. So, theses results allowed an improvement of the maximum oscillation frequency (fmax) of 30% compared with standard single 100nm T-gate HEMT. These results are attributed to reduction of short channel effects, related to higher charge control efficiency and suppression of buffer effect.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave devices; nanotechnology; substrates; 100 nm; DG-HEMT fabrication; InAlAs-InGaAs; InAlAs/InGaAs double-gate HEMT; T-gates InP double-gate HEMT; buffer effect suppression; microwave applications; oscillation frequency; transconductance; transferred substrate; Epitaxial layers; Fabrication; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Microwave devices; Substrates; Transconductance;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419364
