Title :
Growth and characterization of AlGaN/AlN/GaN HEMTs on 100-mm-diameter epitaxial AlN/sapphire templates
Author :
Miyoshi, M. ; Imanishi, A. ; Ishikawa, H. ; Egawa, T. ; Asai, K. ; Mouri, M. ; Shibata, T. ; Tanaka, M. ; Oda, O.
Author_Institution :
Res. Center for Nano-Device & Syst., Nagoya Inst. of Technol., Japan
Abstract :
Al0.26Ga0.74N/AlN/GaN heterostructures with a 1-nm-thick AIN interfacial layer were grown on 100-mm-diameter epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy. They exhibited very high Hall mobilities of approximately 2100 cm2/Vs at room temperature and approximately 25000 cm2/Vs at 15 K with a sheet carrier density of approximately 1 × 1013/cm2. High-electron-mobility transistors were successfully fabricated on the epitaxial wafers. The device exhibited a high drain current density of 832 mA/mm and high extrinsic transconductance of 189 mS/mm.
Keywords :
Hall mobility; III-V semiconductors; aluminium compounds; carrier density; current density; gallium compounds; high electron mobility transistors; substrates; vapour phase epitaxial growth; wafer-scale integration; wide band gap semiconductors; AIN interfacial layer; AlGaN-AlN-GaN; AlGaN/AlN/GaN HEMT; HEMT characterization; HEMT growth; Hall mobility; drain current density; epitaxial AlN/sapphire template; epitaxial wafer fabrication; heterostructures; high-electron-mobility transistors; metalorganic vapor phase epitaxy; sheet carrier density; Aluminum gallium nitride; Charge carrier density; Current density; Epitaxial growth; Gallium nitride; HEMTs; Hall effect; MODFETs; Temperature; Transconductance;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419366
