Drastic suppression of thermally induced leakage of NiSi silicided shallow junctions by pre-SALICIDE fluorine implantation

Author

Tsuchiaki, M. ; Ohuchi, K. ; Nishiyama, A.

Author_Institution

Corporate R&D Center, Toshiba Corp., Yokohama, Japan

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

1059

Lastpage

1062

Abstract

Thermally unstable NiSi films on shallow junctions are known to induce large leakage current on heat stimulus. Thus, a sensitive and comparative investigation is conducted on efficiency of leakage suppression by pre-SALICIDE ion implantation (PSII) for NiSi formation. F-PSII is found to be greatly superior to N-PSII. Unlike N-PSII, F-PSII drastically reduces the leakage without causing any major disturbances to critical CMOS characteristics. Leakage suppression up to 6 orders of magnitude is successfully attained.

Keywords

CMOS integrated circuits; fluorine; integrated circuit technology; ion implantation; leakage currents; nickel compounds; semiconductor junctions; CMOS characteristics; NiSi formation; NiSi silicided shallow junctions; NiSi:F; heat stimulus; leakage current; leakage suppression; pre-SALICIDE fluorine implantation; pre-SALICIDE ion implantation; thermally induced leakage; thermally unstable NiSi films; Annealing; Fabrication; Ion implantation; Large scale integration; Leakage current; Silicidation; Silicon compounds; Stability; Temperature; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419379

Filename

1419379