A highly manufacturable low-k ALD-SiBN process for 60nm NAND flash devices and beyond

Author

Kim, Jin-Gyun ; Ahn, Jae-Young ; Kim, Hong-Suk ; Lim, Ju-Wan ; Kim, Chae-Ho ; Shu, Hoka ; Hasebe, Kazuhide ; Hur, Sung-Hoi ; Park, Jong-Ho ; Kim, Hee-Seok ; Shin, Yu-Gyun ; Chung, U-in ; Moon, Joo-Tae

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Yongin, South Korea

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

1063

Lastpage

1066

Abstract

For the first time, low-k dielectric ALD-SiBN (atomic layer deposition) is successfully developed and applied on poly-Si/WSix gate as a spacer for reduction of parasitic capacitance between the cells. ALD-SiBN deposition is performed at 630°C using dichlorosilane (SiH₂Cl₂-DCS), boron-trichloride (BCl₃) and ammonia (NH₃) as precursors. Compared with the conventional silicon nitride, ALD-SiBN exhibits similar film properties at lower dielectric constant. ALD-SiBN layer is deposited on poly-Si/WSix stack gate in 90nm NAND flash device. A significant reduction (>15%) of the floating-gate coupling voltage is achieved by employing SiBN compared with SiN spacer. In addition, excellent data retention characteristics (@HTS) is identified by applying low-k dielectric SiBN layer as a spacer on 90nm NAND flash device.

Keywords

NAND circuits; ammonia; atomic layer deposition; dielectric thin films; flash memories; nanotechnology; permittivity; silicon compounds; 60 nm; 630 C; 90 nm; ALD-SiBN deposition; BCl₃; NAND flash device; NH₃; SiBN; SiH₂Cl₂; SiH₂Cl₂-DCS; SiN spacer; ammonia; atomic layer deposition; boron-trichloride; data retention; dichlorosilane; dielectric constant; floating-gate coupling voltage; low-k ALD-SiBN process; low-k dielectric SiBN layer; parasitic capacitance reduction; poly-Si-WSix stack gate; silicon nitride; Atomic layer deposition; Atomic measurements; Dielectric constant; Dielectric devices; Manufacturing processes; Nonvolatile memory; Optical films; Parasitic capacitance; Plasma temperature; Refractive index;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419380

Filename

1419380