Title :
Simulation of Highly Efficient InGaN-Based LEDs with Hemispherical Patterned Sapphire Substrates
Author :
Lin, Zhiting ; Yang, Hui ; Li, Guoqiang
Author_Institution :
State Key Lab. of Luminescent Mater. & Devices, Southern China Univ. of Technol., Guangzhou, China
Abstract :
Simulation is used to study how the external quantum efficiency changes with the change in parameters of the unit hemisphere for GaN-based light emitting diodes (LEDs) fabricated on hemispherical patterned sapphire substrates. Through a series of experiments, we reveal the most effective pattern to improve the external quantum efficiency of LEDs on hemispherical patterned sapphire substrates. We also want to demonstrate a convenient way for pattern design and checking.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; sapphire; wide band gap semiconductors; Al2O3; GaN-based light emitting diodes; InGaN; InGaN-based LED; external quantum efficiency; hemispherical patterned sapphire substrates; unit hemisphere; Geometry; Light emitting diodes; Refractive index; Substrates; Tiles;
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-0909-8
DOI :
10.1109/SOPO.2012.6271090
