Structure of Interlayer on Si(111) Substrate Effect on GaN Film

Growth of GaN on silicon is investigated to realize semiconductor device on silicon substrate. Our experiment´s emphasis is focused on different of structure of interlayer on Si(111) substrate to growth high quality GaN layer. For the large mismatch coefficient between of Si and GaN, which result in the crake and defect. By investigating the different structure, we can draw a conclusion on what kind of interlayer can improve the crystal quality. As a result, growth of the uniform gradually interlayer has been achieved in relieving the crake and defect density.