High-gain microwave GaN HEMTs with source-terminated field-plates

Author

Wu, Yifeng F. ; Moore, M. ; Wisleder, T. ; Chavarkar, P.M. ; Mishra, U.K. ; Parikh, P.

Author_Institution

Cree Santa Barbara Technol. Center, Goleta, CA, USA

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

1078

Lastpage

1079

Abstract

GaN HEMTs with field-plates connected to the source terminal have been developed for high-gain, high-voltage operation at microwave frequencies. Due to the reduced feedback capacitance compared to the gate-terminated field-plate structures, improvement in large-signal gain of 5-7 dB is obtained. Superior performance including 21-dB associated gain, 20-W/mm output power and 60% power-added-efficiency at 4 GHz and 118V bias, is achieved simultaneously. This translates to an extremely high voltage-frequency-gain product approaching 10 kV-GHz.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; high-voltage engineering; microwave transistors; wide band gap semiconductors; 118 V; 21 dB; 4 GHz; GaN; gate-terminated field-plate structures; high-gain microwave GaN HEMT; high-voltage operation; high-voltage-frequency gain product; microwave frequency; reduced feedback capacitance; source terminal; source-terminated field-plates; Capacitance; Fabrication; Feedback; Gain; Gallium nitride; HEMTs; MODFETs; Microwave technology; Power generation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419386

Filename

1419386