Title :
High Gain ZnO Nanowire Phototransistor
Author :
Zhang, Arthur ; Soci, Cesare ; Bin Xiang ; Park, Jung ; Wang, Deli ; Lo, Yu-Hwa
Author_Institution :
Univ. of California, San Diego
Abstract :
We demonstrate the potential of nanowires as photo transistors with internal gain. Two- terminal single ZnO nanowire devices have been fabricated, which under UV illumination, show high photoconductive gain (approaching 1010) due to hole-trapping at surface states.
Keywords :
II-VI semiconductors; hole traps; nanoelectronics; nanowires; photoconductivity; phototransistors; zinc compounds; 2-terminal single ZnO nanowire device; UV illumination; ZnO; ZnO nanowire phototransistor fabrication; hole-trapping; photoconductive gain; Electrodes; Lighting; Optical devices; Optical filters; Optical materials; Photoconducting devices; Photoconducting materials; Photoconductivity; Phototransistors; Zinc oxide;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452664
