Title :
Landauer - Datta - Lundstrom generalized electron transport model for micro- and nanoelectronics
Author :
Kruglyak, Yu. ; Strikha, M.
Author_Institution :
Dept. of Inf. Technol., Odessa State Environ. Univ., Odessa, Ukraine
Abstract :
The Landauer - Datta - Lundstrom generalized transport model is briefly summarized. If a band structure is given, the number of conduction modes can be evaluated and, if a model for a mean-free-path for backscattering can be established, then the near-equilibrium thermoelectric transport coefficients can be calculated for 1D, 2D, and 3D resistors in ballistic, quasi-ballistic, and diffusive linear response regimes when there are differences in both voltage and temperature across the device.
Keywords :
ballistic transport; conduction bands; nanoelectronics; resistors; thermoelectricity; 1D resistors; 2D resistors; 3D resistors; Landauer-Datta-Lundstrom generalized electron transport model; backscattering mean-free-path; ballistic regime; band structure; conduction modes; diffusive linear response regimes; microelectronics; nanoelectronics; near-equilibrium thermoelectric transport coefficients; quasiballistic regime; Conductivity; Conductors; Graphene; Mathematical model; Nanoelectronics; Resistors; Three-dimensional displays; ballistic transport; conduction modes; diffusive transport; nanoelectronics; quasi-ballistic transport; thermoelectric coefficients; transmission coefficient;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on
Conference_Location :
Kiev
DOI :
10.1109/ELNANO.2015.7146837
