• DocumentCode
    3006175
  • Title

    Silicon-Germanium p-i-n Photodetectors at Telecommunication Wavelengths Grown Directly on Silicon

  • Author

    Ali, Dyan ; Thompson, Phillip ; Goldhar, Julius ; DiPasquale, Joseph, III ; Richardson, Christopher J.K.

  • Author_Institution
    Univ. of Maryland, College Park
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report on Si-rich Si1-xGex p-i-n waveguide detectors with responsivities greater than 0.74 A/W at 1.3 mum and 20 K. We present two photodetector designs for 1.3 mum detection on silicon without virtual buffer relaxation layers.
  • Keywords
    Ge-Si alloys; optical communication equipment; optical waveguides; p-i-n photodiodes; photodetectors; silicon; SiGe-Si; W-structure design; dark currents; electrically active defects; p-i-n waveguide detectors; silicon-germanium p-i-n photodetectors; telecommunication wavelengths; temperature 20 K; wavelength 1.3 mum; Buffer layers; Dark current; Detectors; Germanium silicon alloys; Optical buffering; Optical films; Optical waveguides; PIN photodiodes; Photodetectors; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4452665
  • Filename
    4452665
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3006175