Title :
Si/SiGe-Based Photodiode on a Standard Silicon Substrate for 10-Gbit/s Short-Reach Fiber Communication at 830nm Wavelength
Author :
Wu, Y.-S. ; Shi, J.-W. ; Li, Z.-L.
Author_Institution :
Nat. Central Univ., Taoyuan
Abstract :
We report a Si/SiGe-based vertical-illuminated photodiode at 830 nm wavelength. Wide 3-dB bandwidth (>10 GHz), high responsivity (1.38 A/W), and high output current (2.35 mA) under avalanche operation can be achieved simultaneously without using silicon-on-insulator (SOI) substrate.
Keywords :
Ge-Si alloys; avalanche photodiodes; optical fibre communication; optical receivers; silicon-on-insulator; Si-SiGe; Si-SiGe-based vertical-illuminated photodiode; Si-SiO2; avalanche photodiode; bit rate 10 Gbit/s; current 2.35 mA; fiber communication; silicon-on-insulator substrate; wavelength 830 nm; Bandwidth; Communication standards; Frequency; High speed optical techniques; Optical fiber communication; Optical pumping; Photoconductivity; Photodiodes; Silicon; Substrates;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452666
