DocumentCode
3006187
Title
Si/SiGe-Based Photodiode on a Standard Silicon Substrate for 10-Gbit/s Short-Reach Fiber Communication at 830nm Wavelength
Author
Wu, Y.-S. ; Shi, J.-W. ; Li, Z.-L.
Author_Institution
Nat. Central Univ., Taoyuan
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We report a Si/SiGe-based vertical-illuminated photodiode at 830 nm wavelength. Wide 3-dB bandwidth (>10 GHz), high responsivity (1.38 A/W), and high output current (2.35 mA) under avalanche operation can be achieved simultaneously without using silicon-on-insulator (SOI) substrate.
Keywords
Ge-Si alloys; avalanche photodiodes; optical fibre communication; optical receivers; silicon-on-insulator; Si-SiGe; Si-SiGe-based vertical-illuminated photodiode; Si-SiO2; avalanche photodiode; bit rate 10 Gbit/s; current 2.35 mA; fiber communication; silicon-on-insulator substrate; wavelength 830 nm; Bandwidth; Communication standards; Frequency; High speed optical techniques; Optical fiber communication; Optical pumping; Photoconductivity; Photodiodes; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4452666
Filename
4452666
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