Title :
Germanium-on-SOI photo-detector based on an FET structure
Author :
Sahni, Subal ; Yablonovitch, Eli ; Liu, J. ; Xie, Ya-Hong
Author_Institution :
Univ. of California, Los Angeles
Abstract :
An integrated Ge-on-SOI photodetector with an FET structure, based on secondary photoconductivity is demonstrated. The Ge gate absorbs ~100 nW of 1.55 mum light, thereby modulating the conductance of the Silicon channel by a factor of 25.
Keywords :
germanium; integrated optoelectronics; photoconductivity; photodetectors; silicon-on-insulator; FET structure; Ge-Si; germanium-on-SOI photodetector; integrated photodetector; power 100 nW; secondary photoconductivity; wavelength 1.55 mum; Contact resistance; Electrical resistance measurement; FETs; Germanium; Integrated optics; Optical devices; Optical films; Optical modulation; Silicon; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452667
