Novel Photoluminescence from Porous SiGe/Si Multilayer Structure

Author

Bi Zhou ; Li, Xuemei ; Pan, Shuwan ; Chen, Songyan ; Li, Cheng

Author_Institution

Dept. of Phys. & Electron. Inf. Eng., Minjiang Univ., Fuzhou, China

fYear

2012

fDate

21-23 May 2012

Firstpage

1

Lastpage

3

Abstract

The optical properties of porous SiGe/Si multilayer films prepared through electrochemical anodization have been investigated. The visible luminescence spectra with multiple emission peaks have been detected in the temperature range from 10 K to room temperature. Photoluminescence (PL) with narrow band width is observed due to the wavelength selective effect of the microcavity. The resonance of the microcavity is confirmed by the temperature dependent PL measurement and the reflectance spectrum, which is consisted with the prediction from the thermo-optic effect.

Keywords

Ge-Si alloys; anodisation; chemical vapour deposition; electrochemistry; elemental semiconductors; microcavities; multilayers; photoluminescence; porous semiconductors; reflectivity; semiconductor growth; semiconductor thin films; thermo-optical effects; vacuum deposition; SiGe-Si; chemical vapour deposition; electrochemical anodization; microcavity; multiple emission peaks; optical properties; photoluminescence; porous multilayer structure; reflectance spectrum; temperature 10 K to 298 K; thermo-optic effect; ultrahigh vacuum chemical vapor deposition; visible luminescence spectra; wavelength selective effect; Cavity resonators; Nonhomogeneous media; Photoluminescence; Silicon; Silicon germanium; Temperature; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronics (SOPO), 2012 Symposium on

Conference_Location

Shanghai

ISSN

2156-8464

Print_ISBN

978-1-4577-0909-8

Type

conf

DOI

10.1109/SOPO.2012.6271109

Filename

6271109