Title :
Fluorine limited reliability of AlInAs/InGaAs high electron mobility transistors with molybdenum gates
Author :
Ishida, T. ; Yamamoto, Y. ; Hayafuji, N. ; Miyakuni, S. ; Hattori, R. ; Ishikawa, T. ; Mitsui, Y.
Author_Institution :
Optoelectr. & Microwave Devices Lab., Mitsubishi Electr. Corp., Itami, Japan
Abstract :
A highly reliable AlInAs/InGaAs high electron mobility transistor with the projected lifetime of 106 hours at 125°C is developed. The gate electrode sinking is eliminated by adopting molybdenum gate contact metal, and the carrier passivation is controlled by eliminating the extrinsic fluorine containing processes. The experimental results and theoretical calculation indicate the present reliability is limited by the intrinsic fluorine contamination from the air
Keywords :
III-V semiconductors; aluminium compounds; fluorine; gallium arsenide; high electron mobility transistors; indium compounds; life testing; molybdenum; passivation; semiconductor device metallisation; semiconductor device reliability; semiconductor device testing; 125 degC; 170 to 240 C; 1E6 h; F; III-V semiconductors; Mo-AlInAs-InGaAs; carrier passivation; degradation mechanisms; gate contact metal; high electron mobility transistor; intrinsic contamination; reliability; Contamination; Degradation; Electrodes; Failure analysis; HEMTs; Indium gallium arsenide; Life estimation; Life testing; MODFETs; Microwave transistors;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600093
