DocumentCode :
3006401
Title :
Modulation instability of terahertz pulses in the structures with n-InSb layers
Author :
Rapoport, Yu.G. ; Grimalsky, V.V. ; Koshevaya, S.V. ; Castrejon-Martinez, C.
Author_Institution :
Phys. Fac., Nat. T. Shevchenko Univ., Kiev, Ukraine
fYear :
2015
fDate :
21-24 April 2015
Firstpage :
124
Lastpage :
127
Abstract :
The nonlinear interaction of transversely limited terahertz waves with layered structures that include n-InSb layers and dielectric ones is investigated theoretically. The nonlinearity possesses the focusing character both in longitudinal and transverse directions. The modulation instability of long terahertz pulses is investigated that leads to the generation of sequences of short pulses of picosecond durations at the output.
Keywords :
III-V semiconductors; indium compounds; narrow band gap semiconductors; terahertz wave spectra; InSb; layered structures; modulation instability; nonlinear terahertz wave interaction; terahertz pulses; transversely limited terahertz waves; Conferences; Dielectrics; Frequency modulation; Graphene; Nanotechnology; Permittivity; focusing nonlinearity; modulation instability; n-InSb; terahertz pulses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on
Conference_Location :
Kiev
Type :
conf
DOI :
10.1109/ELNANO.2015.7146850
Filename :
7146850
Link To Document :
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