• DocumentCode
    3006477
  • Title

    Area selective gold MOCVD for VLSI electronics

  • Author

    Colgate, Samuel O. ; Palenik, Gus J. ; House, V.Evan ; Schoenfeld, Dean W. ; Simon, Charles G.

  • Author_Institution
    Dept. of Chem., Florida Univ., Gainesville, FL, USA
  • fYear
    1989
  • fDate
    12-13 Jun 1989
  • Firstpage
    498
  • Abstract
    Summary form only given. Area-selective metal-organic chemical vapor deposition (MOCVD) of gold thin films has been achieved on tungsten patterned on VLSI-type silicon wafers. Scanning Auger spectroscopy of the wafer deposition areas displays virtual exclusion of gold deposits on silicious regions with 4000-Å-thick gold films of high feature resolution covering the tungsten patterns. The films were deposited by exposing the heated wafer (T<500°C) to an ambient of (C2H5)3PAuCl vapor for 1 h
  • Keywords
    Auger effect; CVD coatings; VLSI; gold; metallisation; Au-W-Si; VLSI; area-selective MOCVD; feature resolution; heated wafer; metal-organic chemical vapor deposition; scanning Auger spectroscopy; virtual exclusion; Chemical vapor deposition; Displays; Gold; MOCVD; Semiconductor thin films; Silicon; Spectroscopy; Sputtering; Tungsten; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
  • Conference_Location
    Santa Clara, CA
  • Type

    conf

  • DOI
    10.1109/VMIC.1989.78052
  • Filename
    78052
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3006477