Title :
Ultraviolet Lasing Characteristics of a GaN Photonic Crystal Defect Emitter
Author :
Lai, Chun-Feng ; Yu, Peichen ; Wang, Te-Chung ; Kuo, Hao-Chung ; Lu, Tien-Chang ; Wang, Shing-Chung ; Lee, Chao-Kuei
Author_Institution :
Nat. Chiao-Tung Univ., Hsinchu
Abstract :
The fabricated GaN photonic crystal defect emitter demonstrated multimode lasing with a low optical pumping threshold of pulse energy ~0.15muJ. The device exhibited high spectral purity and enhanced spontaneous emission factor, beta~0.045.
Keywords :
III-V semiconductors; gallium compounds; optical pumping; photonic crystals; spontaneous emission; surface emitting lasers; wide band gap semiconductors; GaN-Si; energy 0.15 muJ; enhanced spontaneous emission; multimode lasing; optical pumping; photonic crystal defect emitter; spectral purity; ultraviolet lasing characteristics; Gallium nitride; Hydrogen; Laser beams; Laser excitation; Optical pulses; Optical pumping; Photonic crystals; Pump lasers; Spontaneous emission; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452684
