Title :
Room-Temperature InAs/InP Quantum-Dot Photonic Crystal Microlasers Using Cavity-Confined Slow Light
Author :
Bordas, F. ; Seassal, C. ; Dupuy, E. ; Regreny, P. ; Gendry, M. ; Steel, M.J. ; Rahmani, A.
Author_Institution :
EcoleCentralede Lyon, Ecully
Abstract :
We achieved room temperature laser operation, around 1.5 mum, with a single layer of InAs/InP quantum dots in a photonic crystal structure using confined slow light. The lasing threshold is a few hundred muW.
Keywords :
III-V semiconductors; indium compounds; photonic crystals; quantum dot lasers; semiconductor quantum dots; InAs-InP; cavity-confined slow light; photonic crystal structure; room temperature laser operation; room-temperature InAs/InP quantum-dot photonic crystal microlasers; temperature 293 K to 298 K; Indium phosphide; Laser modes; Optical pumping; Photonic crystals; Quantum dot lasers; Quantum dots; Resonance; Semiconductor lasers; Slow light; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452685
