Nanostructured silicon as a multifunctional material for micro- and nanoelectronics

The paper presents technique for single-crystal silicon surface modification by chemical etching. The technique makes it possible to obtain homogeneous nanostructured silicon layers with a thickness 3-60 nm. It was found, that the photosensitivity of such layers depends on their thickness. The method of scanning tunneling spectroscopy showed, that layer thickness changes affect the type (n- or p-) of conductivity. The revealed effect of the conductivity type change could be prospective for practical application of nanostructured silicon in nanoelectronics.