Nanostructured silicon as a multifunctional material for micro- and nanoelectronics

Author

Luchenko, A.I. ; Svezhentsova, K.V. ; Melnichenko, M.M.

Author_Institution

Dept. of Phys. & Technol. of low-dimensional Syst., V.E. Lashkarev Inst. of Semicond. Phys., Kiev, Ukraine

fYear

2015

fDate

21-24 April 2015

Firstpage

145

Lastpage

147

Abstract

The paper presents technique for single-crystal silicon surface modification by chemical etching. The technique makes it possible to obtain homogeneous nanostructured silicon layers with a thickness 3-60 nm. It was found, that the photosensitivity of such layers depends on their thickness. The method of scanning tunneling spectroscopy showed, that layer thickness changes affect the type (n- or p-) of conductivity. The revealed effect of the conductivity type change could be prospective for practical application of nanostructured silicon in nanoelectronics.

Keywords

electrical conductivity; elemental semiconductors; etching; nanostructured materials; scanning tunnelling microscopy; semiconductor growth; silicon; Si; chemical etching; conductivity; homogeneous nanostructured silicon layers; microelectronics; multifunctional material; nanoelectronics; photosensitivity; scanning tunneling spectroscopy; single-crystal silicon surface modification; size 3 nm to 60 nm; Conductivity; Current-voltage characteristics; Etching; Nanocrystals; Silicon; Surface morphology; Tunneling; current-voltage characteristic; lux-ampere characteristics; nanostructured silicon; scanning tunnel spectroscope; stain etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on

Conference_Location

Kiev

Type

conf

DOI

10.1109/ELNANO.2015.7146856

Filename

7146856