Title :
Dynamic Range Extension of a CMOS Active Pixel Sensor with Gate/Body-Tied PMOSFET-Type Photodetectors Using a Feedback Structure
Author :
Bae, Myunghan ; Jo, Sung-Hyun ; Shin, Jang-Kyoo ; Choi, Pyung ; Seo, Sang-Ho
Author_Institution :
Sch. of Electron. Eng., Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
In this paper, a dynamic range extension technique is proposed based on 3-transistor active pixel sensor (APS) with gate/body-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector using a feedback structure. The proposed APS and conventional APS have been designed and fabricated by using 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) process and their characteristics have been measured.
Keywords :
CMOS image sensors; MOS integrated circuits; MOSFET; photodetectors; 2-poly 4-metal standard complementary metal oxide semiconductor process; 3-transistor active pixel sensor; APS; CMOS active pixel sensor; CMOS process; dynamic range extension technique; feedback structure; gate-body-tied PMOSFET-type photodetectors; gate-body-tied p-channel metal oxide semiconductor field effect transistor; size 0.35 mum; Dynamic range; Logic gates; MOSFET circuits; Photoconductivity; Photodetectors; Voltage measurement;
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-0909-8
DOI :
10.1109/SOPO.2012.6271130
