Growth and Material Properties of ZnTe/GaSb Heterostructures for Optoelectronic Device Applications

Author

Liu, Xinyu ; Furdyna, Jacek K. ; Fan, Jin ; Ouyang, Lu ; Smith, David J. ; Ding, Ding ; Zhang, Yong-Hang

Author_Institution

Dept. of Phys., Univ. of Notre Dame, Notre Dame, IN, USA

fYear

2012

fDate

21-23 May 2012

Firstpage

1

Lastpage

4

Abstract

This paper reports the growth of ZnTe/GaSbheterostructures on GaSb (001) substrates using molecular beam epitaxy (MBE). X-ray diffraction (XRD) and high-resolution electron microscopy (HREM) are used to characterize the structural properties. Ellipsometryand photoluminescence (PL) are used to characterize the optical properties.

Keywords

X-ray diffraction; electron microscopy; ellipsometry; gallium compounds; molecular beam epitaxial growth; monolithic integrated circuits; optoelectronic devices; photoluminescence; zinc compounds; GaSb (001) substrates; HREM; X-ray diffraction; ZnTe-GaSb; ZnTe-GaSb heterostructure growth; ellipsometry; high-resolution electron microscopy; material properties; molecular beam epitaxy; optoelectronic device applications; photoluminescence; structural properties; Lattices; Molecular beam epitaxial growth; Optical imaging; Substrates; Temperature measurement; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronics (SOPO), 2012 Symposium on

Conference_Location

Shanghai

ISSN

2156-8464

Print_ISBN

978-1-4577-0909-8

Type

conf

DOI

10.1109/SOPO.2012.6271134

Filename

6271134