A sub-µW, 1.0V CMOS temperature sensor circuit insensitive to device parameters

Author

Sakamoto, Ryota ; Tanno, Koichi ; Tamura, Hiroki ; Abidin, Zainul

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Miyazaki, Miyazaki, Japan

fYear

2011

fDate

21-24 Nov. 2011

Firstpage

626

Lastpage

629

Abstract

In this paper, we firstly propose the CMOS temperature sensor circuit operating in the subthreshold region. The circuit has advantages of 1.0 V operation and sub-μW power consumption. Furthermore, it is insensitive to the device parameter of the fabrication process. Next, we design the high sensitivity temperature sensor circuit that can be realized by cascade-connection of the proposed temperature sensor circuits. The proposed circuits were evaluated through HSPICE with a standard 0.35 μm CMOS device parameter. The simulation demonstrate the maximum power consumption is 0.27 μW under the condition that the temperature range is from 0 °C to 100 °C, the sensitivity is 1.01 mV/ °C and the maximum differential error is 0.87 %.

Keywords

CMOS integrated circuits; SPICE; low-power electronics; temperature sensors; CMOS device parameter; CMOS temperature sensor circuit; HSPICE; device parameter; fabrication process; power 0.27 muW; size 0.35 mum; sub-μW power consumption; temperature 0 degC to 100 degC; voltage 1 V; CMOS integrated circuits; Fabrication; Power demand; Semiconductor device modeling; Sensitivity; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2011 - 2011 IEEE Region 10 Conference

Conference_Location

Bali

ISSN

2159-3442

Print_ISBN

978-1-4577-0256-3

Type

conf

DOI

10.1109/TENCON.2011.6129182

Filename

6129182