A sub-µW, 1.0V CMOS temperature sensor circuit insensitive to device parameters

In this paper, we firstly propose the CMOS temperature sensor circuit operating in the subthreshold region. The circuit has advantages of 1.0 V operation and sub-μW power consumption. Furthermore, it is insensitive to the device parameter of the fabrication process. Next, we design the high sensitivity temperature sensor circuit that can be realized by cascade-connection of the proposed temperature sensor circuits. The proposed circuits were evaluated through HSPICE with a standard 0.35 μm CMOS device parameter. The simulation demonstrate the maximum power consumption is 0.27 μW under the condition that the temperature range is from 0 °C to 100 °C, the sensitivity is 1.01 mV/ °C and the maximum differential error is 0.87 %.