Title :
Circuit of an EEPROM sense amplifier in 0.18 µm CMOS technology
Author :
Rahman, Labonnah F. ; Amin, Md Syedul ; Reaz, M.B.I. ; Ali, M.A.M.
Author_Institution :
Dept. of Electr., Electron. & Syst. Eng., Univ. Kebangsaan Malaysia, Bangi, Malaysia
Abstract :
A sense amplifier for EEPROM memory competent of functioning under a very low-voltage power supply is presented. The sense amplifier was designed for an EEPROM realized with a 0.18-μm CMOS technology. Key design techniques of power dissipation optimization for EEPROM memory are described. The topology of the sense amplifier uses a pure voltage-mode comparison allowing power supply at 1 V to be used. Simulation results showed that the circuit is able to work under a low power and also the size of the circuit is reduced due to the 0.18-μm CMOS process.
Keywords :
CMOS integrated circuits; amplifiers; low-power electronics; read-only storage; CMOS process; CMOS technology; EEPROM memory; EEPROM memory competent; EEPROM sense amplifier circuit; embedded electrically erasable programmable read only memory; low-voltage power supply; power dissipation optimization; size 0.18 mum; voltage 1 V; EPROM; Nonvolatile memory; Power supplies; Radiofrequency identification; Simulation; Transistors; EEPROM; Low power; Sense amplifier; Voltage sensing;
Conference_Titel :
TENCON 2011 - 2011 IEEE Region 10 Conference
Conference_Location :
Bali
Print_ISBN :
978-1-4577-0256-3
DOI :
10.1109/TENCON.2011.6129186
