Effect of field dependent mobility and simultaneous consideration of both SRH and auger recombination on the analytical modeling of internal quantum efficiency of a si-solar cell

In this paper an analytical model of internal quantum efficiency of a silicon solar cell has been developed to show the effects of field dependency of the carrier mobility and the simultaneous consideration of SRH and Auger recombination mechanisms in a non-uniformly doped emitter. In developing this model the doping dependency of carrier lifetime as well as the band-gap narrowing effect due to heavy emitter doping level is considered. An exponential approximation technique is used to deduce an analytically solvable governing differential equation. The developed model shows that the internal quantum efficiency significantly varied due to the field-dependency of carrier mobility and also, due to the simultaneous consideration of SRH and Auger recombination.