Electrodeposition of Indium Antimonide Nanowires in Porous Anodic Alumina Membranes

Vertical arrays of high aspect ratio (>100) InSb nanowires with diameters of ~20 nm have been fabricated using a Porous Anodic Alumina (PAA) template that is supported on a Si substrate with a thin layer of titanium (Ti) sandwiched between them. The process described here uses a reverse anodization technique to penetrate the hemispherical pore bottom barrier oxide layer prior to the electrodeposition process, so as to form a direct electrical contact with the underlying Ti layer. Scanning electron microscopy results demonstrate that the InSb nanowires completely fill the channels of the PAA thereby acquiring a wire diameter of about 20 nm. Raman spectrum of the InSb nanowires indicates high crystal quality.