• DocumentCode
    3007273
  • Title

    Analytical modelling of base transit time considering recombination in the non-uniformly doped base under base pushout condition

  • Author

    Ferdaus, Syeda Israt ; Saha, Sujoy Kumer ; Yeazul, Mohammad ; Hossain, Kabir ; Hossain, Md Forhad ; Chowdhury, Md Iqbal Bahar

  • Author_Institution
    United Int. Univ., Dhaka, Bangladesh
  • fYear
    2011
  • fDate
    21-24 Nov. 2011
  • Firstpage
    729
  • Lastpage
    733
  • Abstract
    The main objective of this paper is to show that recombination in the base needs to be taken into account in determining base transit time under base pushout condition. In previous analytical works for this transit time with base pushout, recombination in the base was neglected, since inclusion of this mechanism leads to an analytically intractable governing differential equation. In this work, the intractability problem is resolved by applying the concept of perturbation theory and by using an elegant exponential approximation technique. The developed model considers both SRH and Auger recombination with doping dependent lifetime and also, considered the energy-bandgap-narrowing effects as well as doping and field dependent mobility due to heavy doping. The model shows that recombination has significant effects on the base transit time of a heavily doped base under base pushout condition.
  • Keywords
    approximation theory; bipolar transistors; differential equations; energy gap; ion recombination; perturbation theory; semiconductor device models; semiconductor doping; base pushout condition; base transit time analytical modelling; bipolar transistors; differential equation; doping dependent lifetime; elegant exponential approximation technique; energy-bandgap-narrowing effects; intractability problem; nonuniformly doped base recombination; perturbation theory; Approximation methods; Current density; Doping; Equations; Junctions; Mathematical model; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    TENCON 2011 - 2011 IEEE Region 10 Conference
  • Conference_Location
    Bali
  • ISSN
    2159-3442
  • Print_ISBN
    978-1-4577-0256-3
  • Type

    conf

  • DOI
    10.1109/TENCON.2011.6129205
  • Filename
    6129205