Title :
Effect of Fluid Gate on the Electrostatics of ISFET-Based pH Sensors
Author :
Go, Jonghyun ; Alam, Muhammad
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
June 28 2010-July 1 2010
Abstract :
We demonstrate that the role of fluid gate or reference electrode in ISFET system is critical in dictating the operation mode of the ISFET and the local pH at the electrolyte-oxide interface as well.
Keywords :
chemical sensors; electrostatics; ion sensitive field effect transistors; pH measurement; ISFET; electrolyte-oxide interface; electrostatics; fluid gate; ion sensitive field effect transistors; pH sensors; reference electrode; Biosensors; Capacitance; Collaboration; Computer interfaces; Electrodes; Electrostatics; FETs; Molecular biophysics; Sensor systems; Silicon;
Conference_Titel :
Micro/Nano Symposium (UGIM), 2010 18th Biennial University/Government/Industry
Conference_Location :
West Lafayette, IN
Print_ISBN :
978-1-4244-4731-2
Electronic_ISBN :
0749-6877
DOI :
10.1109/UGIM.2010.5508912
