Title :
Oxidized Amorphous Silicon As Gate Insulator For Field Mussiun Cathode Arrays
Author :
Peters, D. ; Stephani, D.
Author_Institution :
Siemens AG
Keywords :
Adhesives; Amorphous silicon; Cathodes; Conductivity; Dielectric constant; Dielectric substrates; Dielectrics and electrical insulation; Inorganic materials; Oxidation; Research and development;
Conference_Titel :
Vacuum Microelectronics Conference, 1993., Proceedings of IEEE 6th International
Print_ISBN :
0-7803-0852-2
DOI :
10.1109/IVMC.1993.700309